Crystalline Si solar cells fabricated by CO2 laser doping

We proposed CO₂ laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 10²⁰ cm^-3 were realized by the CO₂ laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.