DocumentCode :
3711353
Title :
Studying anomalous open-circuit voltage drop-out in concentrated photovoltaics using computational numerical analysis
Author :
Margaret A. Stevens;Chandler Downs;David Emerson;James Adler;Scott Maclachlan;Thomas E. Vandervelde
Author_Institution :
The Renewable Energy and Applied Photonics Labs, Tufts University, Medford, MA 02155 USA
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
5
Abstract :
Under ultra-high solar concentration, an anomalous open-circuit voltage drop-out has been observed experimentally, but not understood theoretically. This anomaly is often attributed to various thermal effects but is also observed in flash testing, where thermal effects do not have time to accumulate. As the optically generated carrier density increases past the equilibrium carrier density, open-circuit voltage and other important electrical properties could deteriorate. Using Newton linearizations and the finite-element library deal.II, we developed a computational model to solve the carrier continuity equations for optically generated charge carriers as a function of material depth in bulk III-V semiconductors.
Keywords :
"Mathematical model","Electric potential","Sun","Charge carrier density","Radiative recombination","Gallium arsenide","Boundary conditions"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356072
Filename :
7356072
Link To Document :
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