• DocumentCode
    3711362
  • Title

    Tunable GaInP solar cell lattice matched to GaAs

  • Author

    Islam E. Hashem Sayed;C. Zachary Carlin;Brandon Hagar;Peter C. Colter;Salah M. Bedair

  • Author_Institution
    Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, 27695, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A new strain-balanced multiple quantum well (MQW) approach to tune the Ga0.51In0.49P bandgap is demonstrated. This approach is based on Ga1-xInxP/Ga1-yInyP (x > y) or Ga1-xInxAszP1-z/Ga1-yInyP (x > y) structures, strain balanced and lattice matched to GaAs in a p-i-n solar cell structure. A red shift in the absorption edge and an increase in the short circuit current were observed. Carriers generated in quantum wells due to transitions between the quantum levels are transported across the barriers via thermionic emission. The proposed structure allows more flexibility in the design of current multi-junction solar cells and future cells with more than four junctions.
  • Keywords
    "Quantum well devices","Thermionic emission","Indexes","Adsorption","Lattices","Gallium arsenide","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356081
  • Filename
    7356081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711362