DocumentCode :
3711377
Title :
Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance
Author :
Christoph Kr?mmer;Christian Huber;Thomas Schnabel;Christian Zimmermann;Mario Lang;Erik Ahlswede;Heinz Kalt;Michael Hetterich
Author_Institution :
Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1, 76131, Germany
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We investigate the impact of order-disorder related band gap changes on finished Cu2ZnSn(S,Se)4 solar cells. Solution-processed solar cells are post-annealed in a tube furnace in order to modify the Cu-Zn disorder within the kesterite unit cell. A decrease in this disorder leads to an increased band gap of the absorber. The latter is detected using electroreflectance spectroscopy. In our experiments the change in the open-circuit voltage follows the change in the absorber band gap. However, the open-circuit voltage deficit of the solar cell remains unaltered. Still, power conversion efficiencies could be increased by 1%, mainly due to an increased open-circuit voltage.
Keywords :
"Photonic band gap","Photovoltaic cells","Rapid thermal annealing","Zinc","Fabrication","Standards"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356096
Filename :
7356096
Link To Document :
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