• DocumentCode
    3711377
  • Title

    Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance

  • Author

    Christoph Kr?mmer;Christian Huber;Thomas Schnabel;Christian Zimmermann;Mario Lang;Erik Ahlswede;Heinz Kalt;Michael Hetterich

  • Author_Institution
    Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1, 76131, Germany
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We investigate the impact of order-disorder related band gap changes on finished Cu2ZnSn(S,Se)4 solar cells. Solution-processed solar cells are post-annealed in a tube furnace in order to modify the Cu-Zn disorder within the kesterite unit cell. A decrease in this disorder leads to an increased band gap of the absorber. The latter is detected using electroreflectance spectroscopy. In our experiments the change in the open-circuit voltage follows the change in the absorber band gap. However, the open-circuit voltage deficit of the solar cell remains unaltered. Still, power conversion efficiencies could be increased by 1%, mainly due to an increased open-circuit voltage.
  • Keywords
    "Photonic band gap","Photovoltaic cells","Rapid thermal annealing","Zinc","Fabrication","Standards"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356096
  • Filename
    7356096