Microstructure model for nanocrystalline hydrogenated silicon oxide thin films in silicon heterojunction solar cells

We introduce a microstructure model that consistently correlates the microstructure of nanocrystalline silicon oxide (nc-SiOX:H) to its optical and electrical properties. We successfully validated the model by means of a large quantity of systematically and individually optimized n- and p-doped nc-SiOX:H films deposited at very high frequency (VHF) and radio frequency (RF). In particular, this model indicates that the improved optoelectronic performance of nc-SiOX:H films deposited at VHF as compared to RF might be a consequence of an improved phase separation between the conductive nanocrystalline silicon and the oxygen rich silicon oxide phase.