DocumentCode :
3711497
Title :
Approaching efficiencies above 25% with both sides-contacted silicon solar cells
Author :
Martin Hermle;Frank Feldmann;Johannes Eisenlohr;Jan Benick;H. Steinkemper;Armin Richter;Benjamin Lee;Paul Stradins;Ajeet Rohatgi;Stefan W. Glunz
Author_Institution :
Fraunhofer Institute for Solar Energy Systems, Germany
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
A high cell performance is one of the key drivers to reduce the levelized cost of electricity for PV. Nevertheless, the production costs of a solar cell technology have to be low, to allow a market entry. A both sides-contacted solar cell can potentially fulfill both requirements. In this work we present the latest results of our DOE FPACE project: A both sides-contacted n-type solar cell with a passivated rear contact and an efficiency of 24.9 %. Furthermore, we present preliminary results for the next solar cell improvements and the path to reach efficiencies well above 25 %.
Keywords :
"Photovoltaic cells","Silicon","Passivation","Absorption","Resistance","Heterojunctions"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356219
Filename :
7356219
Link To Document :
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