Title :
>20% efficient 80 ?m thin industrial-type large-area solar cells from 100 ?m Sawn c-Si Wafers
Author :
Yvonne Schiele;Nils Brinkmann;Jan Ebser;Renate Horbelt;Alexander Frey;Josh Engelhardt;Giso Hahn;Barbara Terheiden
Author_Institution :
Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
fDate :
6/1/2015 12:00:00 AM
Abstract :
Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for n-type devices. Industrial-type 80 μm thin large-area rear junction solar cells manufactured from 100 μm wire-sawn wafers exhibit an independently certified efficiency of 20.1% with VOC of 672 mV.
Keywords :
"Photovoltaic cells","Silicon","Junctions","Passivation","Conductivity","Current density","Thyristors"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356220