• DocumentCode
    3711512
  • Title

    3 ?m thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells

  • Author

    E. J. Renteria;S. J. Addamane;D. M. Shima;C. P. Hains;G. Balakrishnan

  • Author_Institution
    Center for High Technology Materials, University of New Mexico, Albuquerque, 87106, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate the integration of 3μm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
  • Keywords
    "Diamonds","Semiconductor diodes","Substrates","Heating","Gallium arsenide","Surface treatment","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356234
  • Filename
    7356234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711512