DocumentCode :
3711514
Title :
Device impact of photon recycling and luminescent coupling on InGaP/Si tandems
Author :
Zekun Ren;Jonathan P. Mailoa;Zhe Liu;Haohui Liu;Sarah E. Sofia;Nasim Sahraei;Sin Cheng Siah; Fen Lin;Tonio Buonassisi;Ian Marius Peters
Author_Institution :
Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, 138602 Singapore
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We numerically evaluate the device impact of photon re-absorption on InGaP/Si tandem solar cells using a coupled optical-electronic device model. The presented simulation results provide guidelines for designing high performance InGaP/Si tandem device. We find that including the effects of photon recycling (PR) and luminescent coupling (LC) results in a 12.5% increase in optimum top-cell thickness for a two-terminal configuration. Furthermore, PR and LC affect the sensitivity of the tandem´s conversion efficiency to various device parameters. As the InGaP bulk lifetime increases, there is an absolute efficiency increase of up to 0.7% for the two-terminal as well as the four-terminal configuration. Considering PR and LC furthermore reduces the power generation sensitivity to shunting in the two-terminal configuration. For the four-terminal configuration, photon re-absorption has a less significant impact.
Keywords :
"Silicon","Photonics","Photovoltaic cells","Resistance","Couplings","Photovoltaic systems"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356236
Filename :
7356236
Link To Document :
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