Title :
Methods of nano-crystallization of thin silicon films
Author :
Michal Kolodziej;Tomasz Kolodziej;Andrzej Kolodziej
Author_Institution :
AGH University of Science and Technology, Department of Automatics and Biomedical Engineering, Krakow, Poland
fDate :
6/1/2015 12:00:00 AM
Abstract :
In the paper the authors are analyzing differences in the nature of crystallization between: the nano-crystallization during deposition in multilayer RF PECVD process, in which hydrogen concentration and other parameters were changing over time, and crystallization of the same samples during temperature annealing in the range 200-1000°C. Observed behavior differs from columnar crystallization of μc-Si:H films deposited in homogeneous process. The analysis is carried out with respect on application of the films to solar structures.
Keywords :
"Annealing","Silicon","Films","Crystallization","Photovoltaic cells","Nonhomogeneous media"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356309
