New and effective anti reflection coating of SiC-SiO2 nanocomposite for p-type silicon solar cell

This work demonstrated the preparation of new and effective antireflection SiC-SiO₂ nanocomposite by sol-gel process for Si solar cells. The AR coating was conducted in two steps: i) sol-gel derived precursor was coated on p-type Si wafer by spin coating, and ii) the coated wafer was subjected to annealing at 450°C for 1h. The reflectance analysis revealed that SiC-SiO₂ layers presented the relatively low reflectance (7.08%) in wavelengths ranging from 400 to 1000 nm. The fabricated Si solar cell with SiC-SiO₂ AR attained very comparable energy conversion efficiency of 16.99% to the Si solar cells with SiNx AR.