• DocumentCode
    3711602
  • Title

    Plasma damage effect on ultraviolet-induced degradation of PECVD SiNx:H passivation

  • Author

    Takefumi Kamioka;Daisuke Takai;Tomihisa Tachibana;Takuto Kojima;Yoshio Ohshita

  • Author_Institution
    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A mechanism of the ultraviolet (UV)-induced degradation of SiNx:H passivation is investigated from the viewpoint of PECVD-induced defects. Due to the PECVD, the damaged layer with around 50 nm is formed near the Si surface. These defects are passivated with hydrogen atoms, resulting in low recombination velocity at this region. However, it is increased by the light irradiation and minority carrier lifetime is decreased. Therefore, it is important to consider the effect of plasma-induced damage for better understanding the UV-degradation mechanism.
  • Keywords
    "Silicon","Passivation","Lighting","Handheld computers","Hydrogen","Atomic layer deposition"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356326
  • Filename
    7356326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711602