• DocumentCode
    3711615
  • Title

    Effects of arsenic source molecule on N-H related defects formation in GaAsN grown by chemical beam epitaxy

  • Author

    Yoshio Ohshita;Koshiro Demizu;Omar Elleuch;Kazuma Ikede;Nobuaki Kojima;Hideaki Machida;Hiroshi Sudoh;Masafumi Yamaguchi

  • Author_Institution
    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The formation mechanism of N-H related defects in GaAsN grown by chemical beam epitaxy is studied by the isotope effects on the local vibration modes (LVMs). When the deuterated tris(dimethylamino)arsenic (TDMAAs) is used as an arsenic source, new signals appear in the spectrum and they are attributed to the N-D related LVM signals. Therefore, the As source molecule contributes to the formation of N-H related defects in GaAsN. When TDMAAs flow rate increases, the concentration of N-H related defects at 2952cm-1 increases. These results suggest that N-CH3 in the molecule is one of the origins of the N-H at 2952cm-1 in the grown films.
  • Keywords
    "Lattices","Molecular beam epitaxial growth","Nitrogen","Arsenic","Indexes"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356339
  • Filename
    7356339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711615