High temperature InGaN solar cell modeling

This work presents TCAD simulation for InGaN solar cell at high temperature. 1J solar cells, n-i-p structure based tunnel junctions and a 2J tandem solar cell are investigated. Tunneling and thermionic emission models are included to assist current to transport through hetero-interface. We also introduce a step layer at hetero-interface to relax band offset and polarization, which is more practical compared with Indium composition grading layer for the sake of fabrication. The theoretical conversion efficiency of the best devices can be 30% at 450 °C with an incident solar radiation concentration of 200 suns. This proposed solar cell is promising for concentrated solar-power hybrid systems.