Title :
Solution-deposited CuIn(S,Se)2 absorber layers from metal chalcogenides
Author :
Panagiota Arnou;Carl S. Cooper;Andrei V. Malkov;John M. Walls;Jake W. Bowers
Author_Institution :
CREST (Centre for Renewable Energy Systems and Technology), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU, UK
fDate :
6/1/2015 12:00:00 AM
Abstract :
CuIn(S,Se)2 (CISS) thin films were deposited using metal chalcogenide precursor solutions. This process involves the dissolution of metal chalcogenides in a solvent combination comprised of ethylenediamine and ethanedithiol and it serves as a safer alternative to the hydrazine-based approach. The characterization of the deposited material verifies the presence of the CISS chalcopyrite phase with good crystal growth. CISS devices were completed in a glass/Mo/CISS/CdS/i-ZnO/AZO configuration with power conversion efficiencies of 6%. The use of a safer solvent mixture and the avoidance of a complicated precursor synthesis can potentially result in a feasible and industrially scalable deposition methodology for CIGS.
Keywords :
"Solvents","Films","Glass","Photovoltaic cells","Sulfur","Copper"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356369
