Investigation of state-filling and carrier collection of doped InAs QDs through direct absorption measurement

A method of fabricating transmission samples was created to determine if the reduction in quantum efficiency of heavily delta-doped quantum dots (QD) was due to a loss in minority carrier collection efficiency, as was shown for bulk material, or due to saturation of the lowest energy states by dopant carriers. This was achieved by bonding the sample to a glass slide as a handle, utilizing substrate removal to thin the sample, as well as anti-reflective and pro-transmission optical coatings to improve transmission and reduce reflection.