• DocumentCode
    3711843
  • Title

    Magneto-electric magnetic tunnel junction as process adder for non-volatile memory applications

  • Author

    Nishtha Sharma;Andrew Marshall;Jonathan Bird;Peter Dowben

  • Author_Institution
    The University of Texas at Dallas, Richardson, TX
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Magneto-electric magnetic tunnel junction devices (ME-MTJ) show promise for beyond-CMOS memory applications. The advantages of these devices include non-volatility, easy integration with CMOS processing, high-density, low power consumption and high-speed operation. We discuss circuitry that allows the ME-MTJ devices to interface with SRAM memory, to create non-volatile storage elements. Various layouts are suggested for the circuit configurations, showing flexible integration in an efficient manner.
  • Keywords
    "Magnetic tunneling","CMOS integrated circuits","Frequency modulation","Layout","Magnetic hysteresis","SRAM cells"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems Conference (DCAS), 2015 IEEE Dallas
  • Type

    conf

  • DOI
    10.1109/DCAS.2015.7356588
  • Filename
    7356588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711843