Title :
High-speed high-power InAlAs/InGaAs/InP schottky photodiode
Author :
A. Chizh;S. Malyshev;K. Mikitchuk
Author_Institution :
Laboratory of Semiconductor Optoelectronics, Stepanov Institute of Physics, Minsk, Belarus
Abstract :
In this paper, a new high-power photodiode design based on Schottky-barrier contact to reduce thermal resistance, which limit the output microwave power of photodiodes with small active area, is presented. High-speed high-power InAlAs/InGaAs/InP Schottky photodiode has been fabricated and characterized.
Keywords :
"Photodiodes","Optical fibers","Optical device fabrication","Optical saturation","Absorption","Optical mixing"
Conference_Titel :
Microwave Photonics (MWP), 2015 International Topical Meeting on
DOI :
10.1109/MWP.2015.7356654
