Immediate sleep: Reducing energy impact of peripheral circuits in STT-MRAM caches

Implementing last level caches (LLCs) with STT-MRAM is a promising approach for designing energy efficient microprocessors due to high density and low leakage power of its memory cells. However, peripheral circuits of an STT-MRAM cache still suffer from leakage power because large and leaky transistors are required to drive large write current to STT-MRAM element. To overcome this problem, we propose a new power management scheme called Immediate Sleep (IS). IS immediately turns off a subarray of an STT-MRAM cache if the next access is predicted to be not critical in performance. Thus, IS can effectively reduce leakage energy with little impact on performance. Our experimental results show that our technique can save the leakage energy of an STT-MRAM LLC by 32% compared to an STT-MRAM LLC with the conventional scheme at the same performance.