DocumentCode :
3713289
Title :
TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC
Author :
Jonghoon J. Kim;Daniel H. Jung;Heegon Kim;Sunkyu Kong;Sumin Choi;Jaemin Lim;Joungho Kim
Author_Institution :
Terahertz Interconnection and Package Laboratory, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
fYear :
2015
Firstpage :
212
Lastpage :
215
Abstract :
Simultaneous switching noise (SSN) is caused by the simultaneous switching of a group of I/O drivers, and is proportional to the total inductance and the rate of change of the switching current. This often leads to signal distortion and degradation of signal and power integrity of systems. Furthermore, with the continuously decreasing operating voltage, susceptibility to SSN keeps on increasing and it becomes increasingly challenging to achieve high performance interfaces. Therefore, it is highly important to perform SSN analysis in order to accurately investigate the noise and timing margin of the devices under test; hence, it is important to know the exact amount of switching current drawn by the ICs. In this paper, we propose TSV-based current probing structure using magnetic coupling, named TSV-based Current Probe (TCP). By capturing the magnetic flux induced by the injected current and processing it through a series of reconstruction steps, we can obtain the original current waveform of interest. Through a series of simulations in frequency and time domains, we verify the performance of the proposed probing structure, TCP. Lastly, TCP is fabricated using TSV fabrication techniques and measured for experimental verification.
Keywords :
"Through-silicon vias","Current measurement","Frequency-domain analysis","Voltage measurement","Magnetic flux","Time-domain analysis","Probes"
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2015 10th International Workshop on the
Type :
conf
DOI :
10.1109/EMCCompo.2015.7358359
Filename :
7358359
Link To Document :
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