• DocumentCode
    37141
  • Title

    A Low-Noise 150–210 GHz Detector in 45 nm CMOS SOI

  • Author

    Uzunkol, Mehmet ; Rebeiz, Gabriel M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • Volume
    23
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    309
  • Lastpage
    311
  • Abstract
    This letter presents a G-band detector in a 45 nm silicon-on-insulator CMOS technology. The measured detector responsivity is 3 kV/W at 170-180 GHz with a 3 dB bandwidth of 150-210 GHz. The detector results in a Noise-Equivalent-Power (NEP) of 8-10 pW/Hz1/2 at a bias current of 50-200 μA for an IF of 10 MHz and is well matched with an input return loss > 10 dB at 167-194 GHz. The responsivity and NEP values are close to the best SiGe detectors, and show that advanced CMOS nodes are suitable for ~ 200 GHz imaging arrays.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave detectors; silicon-on-insulator; CMOS SOI; G-band detector; NEP values; SiGe; advanced CMOS nodes; bandwidth 150 GHz to 210 GHz; imaging arrays; low-noise detector; noise-equivalent-power values; silicon-on-insulator CMOS technology; size 45 nm; Detector; G-band; imaging; noise-equivalent-power (NEP); responsivity;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2013.2258256
  • Filename
    6508923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=37141