Thermal characteristics of diamond film coatings for GaN HEMT devices

Diamond as a heat spreading film for Gallium Nitride (GaN) based devices has been proposed. For the successful integration and heat management, these films need to exhibit high in-plane thermal conductivity. We present a measurement method based on the laser flash method for thin films below 10 μm. The method uses free-standing diamond films on a silicon frame. The method has been used to show the high thermal conductivity of thin diamond films.