Fully integrated LDMOS class AB power amplifiers

Two fully integrated laterally diffused MOS (LDMOS) class AB power amplifiers (PA) are presented. The PAs are fabricated in 0.18 μm power management platform, which is integrated with a standard logic technology CMOS process. The single stage PA utilizes LC matching to achieve a peak output power of 31.4 dBm at 3.8 GHz. A small signal gain of 5.2 dB and a maximum drain efficiency (DE) of 24.3 % are also achieved, using a 9 V supply. The two stage differential design utilizes input and output transformers and LC inter-stage matching to achieve a peak saturated output power of 33.3 dBm at 3.9 GHz. A small signal gain of 9 dB and a maximum drain efficiency (DE) of 10.5 % are also achieved, using a 9 V supply.