• DocumentCode
    3715058
  • Title

    High-power high-efficiency green LEDs

  • Author

    Chris Yan;Spring Bai;Tim Nie;Vincent Wang

  • Author_Institution
    InvenLux Technologies Co., Ltd., No. 1 Yintai Road, Economic Development Zone, Haiyan Couty, Jiaxing, Zhejiang, 314305, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    High-power green LEDs in mass-production is reaching a new WPE (wall-plug-efficiency) level of 35%, and this progress results from both band- and strain-engineering in the active multiple-quantum-well region and optimal p- and n-electrodes layout for uniform current spreading. For high-power green LEDs of chip size 45 mil×45 mil (4545 chips), the forward voltage at 350 mA is as low as 2.8 V, with emitting power of 345 mW and emitting flux of 152 lumen at a dominant wavelength of 525 nm. These data translate into an external quantum efficiency of 41.7% and a luminous efficacy of 153 lm/W, with peak luminous efficacy over 280lm/W. It is envisioned that these high-power high-efficiency green LEDs will open up new market applications such as high-end healthy-lighting and mitigate the so-called “green-gap” for another level of the solid-state general lighting.
  • Keywords
    "Light emitting diodes","Quantum well devices","Optical buffering","Electrodes","Layout","Optical fibers"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Lighting (SSLCHINA), 2015 12th China International Forum on
  • Print_ISBN
    978-1-5090-0175-0
  • Type

    conf

  • DOI
    10.1109/SSLCHINA.2015.7360676
  • Filename
    7360676