Title :
OIV-CMOS: A novel approach towards leakage power reduction
Author :
Nidhi Gaur;Smita Singhal;Pradeep Kumar;Anu Mehra
Author_Institution :
Department of ECE, ASET, Amity University, Noida
Abstract :
In this paper we propose a new approach Overdriving Input Voltage CMOS (OIV-CMOS) to suppress static power. We found that in comparison to the base inverter, leakage power dissipation is appreciably reduced by 99.66% in OIV-CMOS at 180nm CMOS technology. It is also observed that for 2:1 MUX, the standby mode power consumption is reduced by 65.8% without effecting the performance and area of the circuit.
Keywords :
"CMOS integrated circuits","Inverters","CMOS technology","Transistors","Logic gates","Switching circuits","Very large scale integration"
Conference_Titel :
Computer and Computational Sciences (ICCCS), 2015 International Conference on
Print_ISBN :
978-1-4799-1818-8
DOI :
10.1109/ICCACS.2015.7361132
