Title :
Design of a 1MHz self-resonant reset forward converter with GaN transistor
Author :
Yunbo Gu; Tingyu Geng; Xiaoyong Ren; Zhiliang Zhang; Qianhong Chen
Author_Institution :
Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
Abstract :
Gallium Nitride (GaN) transistors have advantages in self-resonant reset forward converter (SRFC) at 1MHz for high reliability application. Main design challenges of the converter have been discussed in this paper, especially the selection of resonance parameters. Then, design of a SRFC working with constant frequency at 1MHz is presented in detail. Finally a 20W GaN based prototype is established in laboratory environment and experiment results verified that GaN transistor improvs the performance of the converter with high frequency and small size.
Keywords :
"Gallium nitride","Transistors","Inductance","Switches","Silicon","Magnetic resonance"
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International
Print_ISBN :
978-1-4799-7655-3
DOI :
10.1109/IFEEC.2015.7361385
