DocumentCode
3715416
Title
Design of a 1MHz self-resonant reset forward converter with GaN transistor
Author
Yunbo Gu; Tingyu Geng; Xiaoyong Ren; Zhiliang Zhang; Qianhong Chen
Author_Institution
Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
fYear
2015
Firstpage
1
Lastpage
6
Abstract
Gallium Nitride (GaN) transistors have advantages in self-resonant reset forward converter (SRFC) at 1MHz for high reliability application. Main design challenges of the converter have been discussed in this paper, especially the selection of resonance parameters. Then, design of a SRFC working with constant frequency at 1MHz is presented in detail. Finally a 20W GaN based prototype is established in laboratory environment and experiment results verified that GaN transistor improvs the performance of the converter with high frequency and small size.
Keywords
"Gallium nitride","Transistors","Inductance","Switches","Silicon","Magnetic resonance"
Publisher
ieee
Conference_Titel
Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International
Print_ISBN
978-1-4799-7655-3
Type
conf
DOI
10.1109/IFEEC.2015.7361385
Filename
7361385
Link To Document