• DocumentCode
    3715525
  • Title

    Thermal modeling analysis of the IGBT integration shunt model

  • Author

    Meng Zhaoliang; Yang Yuan; Gao Yong; Xi Gang; Han Liye; Zhang Hongwei

  • Author_Institution
    School of Automation and Information Engineering, Xi´an University of Technology, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    For an IGBT driver, the current detection and protection function is of great importance. Although the shunt could be cascaded with the emitter of the IGBT to detect the collector´s current without any delay, there would be a significant power consumption. Therefore heat dissipation of the shunt is the key problem to be solved. In this paper, the shunt is integrated in a Direct Bonding Copper (DBC) baseplate to solve the heat dissipation problem. The thermal model of a 1200V/800A IGBT module is developed with the three-dimensional finite element method (3-D FEM) using the ANSYS software package. The simulation results prove that it is feasible to solve the heat dissipation problem by integrating the shunt with the DBC baseplate.
  • Keywords
    "Insulated gate bipolar transistors","Heating","Finite element analysis","Current measurement","Pins","Welding"
  • Publisher
    ieee
  • Conference_Titel
    Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International
  • Print_ISBN
    978-1-4799-7655-3
  • Type

    conf

  • DOI
    10.1109/IFEEC.2015.7361494
  • Filename
    7361494