Self-biasing high-voltage driver based on standard CMOS with an adapted level shifter for a wide range of supply voltages

This paper presents the design of a high-voltage driver based on stacked standard low-voltage CMOS with an adapted level shifter. Both circuits are designed in 65-nm TSMC technology with a nominal voltage of 2.5 V without any passive elements. The control voltages to regulate the stacked transistors of the HV-driver are achieved by proposing cascode self-biasing method, therefore no reference voltages are required. The driver and the level shifter are optimized for arbitrary supply voltages from 3.5 V to 7.5 V. This range is extended by 66.7% when compared against common drivers and level shifters being suitable for a supply voltage range of 2.4 V between 5.1 V and 7.5 V. The circuit is stable for temperatures between -45 °C and 125 °C , and has no overvoltage between the terminals of each transistor.