DocumentCode
3717632
Title
Micromachined mass sensor based on film bulk acoustic resonator
Author
Yan-lu Feng;Meng-wei Liu;Xin Li;Jian Li
Author_Institution
School of Information Science and Engineering, Shenyang University of Technology, 110870, China
fYear
2015
Firstpage
228
Lastpage
231
Abstract
In this paper, an Al-ZnO-Al film bulk acoustic resonator (FBAR) is described, which has a high mass sensitivity. And the series resonant frequency (fs) and parallel resonant frequency (fP) of the micromachined FBAR have been measured by using a network analyzer, which are 1.546 GHz and 1.590 GHz, respectively (close to the theoretical value simulated by mason equivalent circuit model). Moreover, the effective electromechanical coupling coefficient (Keff2) and quality Q have been calculated to be 6.83% and 350, respectively. After the FBAR packaging, the mass loading was added on the FBAR backside surface by sputtering different thicknesses of ZnO layer. From the graph of the resonant frequency versus added ZnO thickness, the FBAR is measured to have a mass sensitivity Sm of 1116.55 cm2 / g. The result is almost agreed with the theoretical value of 1166.86 cm2 / g, which is about 80 times of the conventional quartz crystal microbalance (QCM).
Keywords
"Film bulk acoustic resonators","Resonant frequency","Zinc oxide","II-VI semiconductor materials","Sensitivity","Loading","Electrodes"
Publisher
ieee
Conference_Titel
Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2015 Symposium on
Type
conf
DOI
10.1109/SPAWDA.2015.7364478
Filename
7364478
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