• DocumentCode
    3718205
  • Title

    A K band high power amplfier in 180-nm CMOS

  • Author

    Cheng-Hung Hsieh; Zuo-Min Tsai

  • Author_Institution
    Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan, 621, R.O.C.
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.
  • Keywords
    "Power amplifiers","CMOS integrated circuits","Logic gates","Gain","CMOS technology","Semiconductor device measurement","Layout"
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetics: Applications and Student Innovation Competition (iWEM), 2015 International Workshop on
  • Type

    conf

  • DOI
    10.1109/iWEM.2015.7365083
  • Filename
    7365083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718205