DocumentCode :
3718360
Title :
Modeling and simulation of heat transfer characteristics of 12-inch wafer on electrostatic chuck
Author :
Kuo-Chan Hsu; Jaw-Yen Yang; Jian-Zhang Chen; Yi-Hsiuan Yu; Yen-Ju Chen
Author_Institution :
Institute of Applied Mechanics, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan, ROC
fYear :
2015
Firstpage :
304
Lastpage :
307
Abstract :
The content of this study observes the heat transfer characteristics of the wafer on the AlN and Al2O3 electrostatic chuck (ESC), which were utilized under the various operational conditions, is studied for the potential improvement on the temperature uniformity of the 12-inch wafer. In addition, an identical study on the expanded chuck (299mm) is also carried out for a comparison of the original chuck (293mm). In addition, a good agreement with previous work was achieved and examined the reliability in this model system. It demonstrates the AlN chuck exhibits an excellent ability for the wafer cooling on the edge, but is unfavorable to the temperature uniformity. In contrast, Al2O3 chuck is well capable of controlling the uniformity. While the original chuck are modified to the expanded chuck, it shows a contrastive results obtained in histogram with a standard deviation (SD), as an indicator of the temperature uniformity, as compared with that of the original chuck. The AlN expanded chuck plays a critical role on the SD which shows a more linear dependence than that of Al2O3 one which becomes independent on the pressure of beyond 5 torr.
Keywords :
"Aluminum nitride","III-V semiconductor materials","Temperature distribution","Mathematical model","Semiconductor device modeling","Heat transfer","Plasma temperature"
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2015 10th International
Print_ISBN :
978-1-4673-9690-5
Type :
conf
DOI :
10.1109/IMPACT.2015.7365248
Filename :
7365248
Link To Document :
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