DocumentCode :
3718369
Title :
Enabling wet etch process for TSV reveal high-volume manufacturing
Author :
Laura Mauer;John Taddei;John Clark;Erwan Le Roy
Author_Institution :
Veeco Precision Surface Processing LLC, 185 Gibraltar Road, Horsham, PA 19044 USA
fYear :
2015
Firstpage :
101
Lastpage :
103
Abstract :
2.5D and 3D packaging continues to be a popular topic within the semiconductor industry. Several announcements have shown signs of adoption for the new packaging technology, especially for stacked DRAMi. The reveal of the Through Silicon Via (TSV) is a critical step within this packaging integration sequence. However, the biggest challenge delaying high-volume manufacturing is the cost. This article presents a two-step wet etch technique as an economical process for achieving uniformly revealed vias.
Keywords :
"Silicon","Rough surfaces","Surface roughness","Etching","Three-dimensional displays","Through-silicon vias"
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2015 10th International
Print_ISBN :
978-1-4673-9690-5
Type :
conf
DOI :
10.1109/IMPACT.2015.7365257
Filename :
7365257
Link To Document :
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