DocumentCode :
3718506
Title :
A Radiation-Hardened Non-Redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process
Author :
Junki Yamaguchi;Jun Furuta;Kazutoshi Kobayashi
Author_Institution :
Kyoto Inst. of Technol., Kyoto, Japan
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
We propose SLCCFF which is a radiation hardened non-redundant flip-flop in 65 nm SOTB (Silicon On Thin BOX) process. We measured its soft error rates by neutron irradiation. SLCCFF has the stacked structure to prevent soft errors on SOI processes while maintaining smaller delay and power overhead than conventional stacked FFs. Experimental results show that the SLCCFF is about 27x stronger than the standard DFF at 0.4V power supply in the SOTB process. It is about 1000x stronger compared with the standard DFF in the bulk process.
Keywords :
"Delays","Radiation effects","Inverters","Neutrons","Error probability","Semiconductor device measurement","MOSFET"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365581
Filename :
7365581
Link To Document :
بازگشت