• DocumentCode
    3718507
  • Title

    Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors

  • Author

    R. Secondo;G. Foucard;S. Danzeca;R. Losito;P. Peronnard;A. Masi;M. Brugger;L. Dusseau

  • Author_Institution
    Eur. Organ. for Nucl. Res. (CERN), Geneva, Switzerland
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU bursts generation was carried out on an 8 Mbit 90-nm memory and a solution approach using a detection and correction algorithm implemented on an FPGA was investigated.
  • Keywords
    "Random access memory","Single event upsets","Field programmable gate arrays","Detection algorithms","Radiation effects","Arrays","Software"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365582
  • Filename
    7365582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718507