Title :
Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
Author :
R. Secondo;G. Foucard;S. Danzeca;R. Losito;P. Peronnard;A. Masi;M. Brugger;L. Dusseau
Author_Institution :
Eur. Organ. for Nucl. Res. (CERN), Geneva, Switzerland
Abstract :
SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. A study of SEU bursts generation was carried out on an 8 Mbit 90-nm memory and a solution approach using a detection and correction algorithm implemented on an FPGA was investigated.
Keywords :
"Random access memory","Single event upsets","Field programmable gate arrays","Detection algorithms","Radiation effects","Arrays","Software"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365582
