Analysis of BOX Layer Thickness on SERs of 65 and 28nm FD-SOI Processes by a Monte-Carlo Based Simulation Tool

We estimate SERs of FD-SOI structures according to the thicknesses of BOX (Buird OXide) layer on 65-nm and 28-nm processes by reducing supply voltage. Alpha, neutron irradiation experiments and Monte-Carlo based simulations are compared in this work. The SOTB (Silicon on Thin BOX) and the UTBB (Ultra Thin Body and BOX) structures are evaluated in the irradiation experiments. The SERs of those structures are analyzed by the simulation tool with layout pattern of test chips. The simulation results are consistent with the alpha and neutron irradiation measurement results. According to the simulated result, the SERs are decreased by increasing the thickness of BOX layer.