Analysis of SRAM-Based FPGA SEU Sensitivity to Combined Effects of Conducted EMI and TID

This work proposes a novel methodology to evaluate SRAM-Based FPGA SEU susceptibility to noise on VDD power pins and total-ionizing dose (TID). The procedure was demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8MV Pelletron accelerator, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. The injected noise on power supply bus comprised of voltage dips of 16.67% and 25% of VDD at two different frequencies 10Hz and 5kHz, and was performed according to the IEC 61.000-4-29 international standard.