DocumentCode :
3718518
Title :
Comparison of Irradiation at Low Dose Rate and Irradiation at Elevated Temperature to Reveal ELDRS in Bipolar Linear Circuits
Author :
Konstantin I. Tapero;Aleksandr S. Petrov;Pavel A. Chubunov;Victor N. Ulimov;Vasily S. Anashin
Author_Institution :
Res. Inst. of Sci. Instrum. (RISI), Lytkarino, Russia
fYear :
2015
Firstpage :
1
Lastpage :
5
Abstract :
The degradation of LM124J operational amplifier under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. The results show that degradation of studied devices due to total ionizing dose effects continues to increase significantly, if the dose rate decreases below 0.01 rad(Si)/s, that is not typical for the most of bipolar devices. It can complicate the use of criteria of enhanced low dose rate sensitivity (ELDRS), which are defined by existing standards for radiation tests. The paper shows how to take into account such effects during radiation testing considering ELDRS.
Keywords :
"Radiation effects","Degradation","Annealing","Testing","Temperature","Sensitivity","Transistors"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365593
Filename :
7365593
Link To Document :
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