DocumentCode :
3718527
Title :
Dose Effects in CMOS Operational Amplifiers with Bipolar and CMOS Input Stage at Different Dose Rates and Temperatures
Author :
Konstantin I. Tapero;Aleksandr S. Petrov;Pavel A. Chubunov;Victor N. Ulimov;Vasily S. Anashin
Author_Institution :
Res. Inst. of Sci. Instrum., Lytkarino, Russia
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
The degradation of CMOS operational amplifiers with bipolar and CMOS input stage under the irradiation at different dose rates and temperatures is investigated. It is shown that such circuits can be susceptible to both enhanced low dose rate sensitivity and time-dependent effects that should be taken into account during radiation testing.
Keywords :
"Radiation effects","Degradation","CMOS integrated circuits","Annealing","Operational amplifiers","Temperature sensors","Temperature measurement"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365602
Filename :
7365602
Link To Document :
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