Title :
Dose Effects on CMOS Active Pixel Sensors
Author :
S. Dhombres;A. Michez;J. Boch;S. Beauvivre;J. -R. Vaille;A. D. Touboul;P. C. Adell;F. Bezerra;E. Lorfevre;D. Kraehenbuehl;F. Saigne
Author_Institution :
IES - UMR UM2, Univ. Montpellier, Montpellier, France
Abstract :
A thermal annealing approach is applied on irradiated CMOS active pixel sensors to investigate total dose effects and improve device lifetime. Results are discussed and help identified the sensor´s sensitive areas.
Keywords :
"Annealing","CMOS integrated circuits","Radiation effects","Degradation","Dark current","Heating","Active pixel sensors"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365603
