Title :
Elimination of Single Event Latch-Up in the ATMEL ATMX150RHA Rad-Hard CMOS 150nm Cell-Based ASIC Family
Author :
D. Truyen;E. Leduc;F. Braud
Author_Institution :
Technol. &
Abstract :
This paper presents a dual-deep-wells process option to completely eliminate the Single Event Latch-up (SEL)of the ATMEL 150nm CMOS SOI technology. TCAD simulations were performed to investigate the efficiency of this process option versus the doping concentration. The experiments show that the combination of the buried oxide and dual-deep-wells is an effectiveness technique to eliminate the SEL effect.
Keywords :
"Doping","Standards","CMOS integrated circuits","Silicon-on-insulator","Semiconductor process modeling","Resistance","Vehicles"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365608
