Title :
Enhanced Low Dose Rate Sensitivity Analysis of Vertical BJT-STMicroelectronics
Author :
Francesco Pintacuda;Marc Poizat;Michele Muschitiello
Author_Institution :
STMicroeletronics SRL, Catania, Italy
Abstract :
Enhanced Low Dose Rate Sensitivity of many BJT-STM transistors have been studied. The devices 2N2222AHR, 2N2907AHR, 2N5401HR, 2N5551HR, 2N3810HR and 2ST3360HR have been tested getting up to TID: 100Krad according to ESCC22900 specification. They have been tested with two different dose rate (10mrad/s and 100mrad/s) in two different biasing conditions (ON/OFF) with the aim of identify or verify the ELDRS effect of Hi-Rel& Rad-Hard BJT vertical transistors. The radiation results obtained for all products showing good performance up to 100Krad and any dose rate effect can be observed.
Keywords :
"Radiation effects","Testing","Annealing","Aging","Sensitivity","Bipolar transistors","Qualifications"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365609
