Title :
Influence of Neutrons Irradiation on Electrical Traps Existing in GaN-Based Transistors
Author :
F. Berthet;S. Petitdidier;Y. Guhel;J. L. Trolet;P. Mary;C. Gaquiere;B. Boudart
Abstract :
This paper shows the impact of low fluence neutrons irradiation on AlGaN/GaN and AlInN/GaN HEMTs. The initial presence of electrical traps seems to play a major role on the evolution of dc electrical characteristics.
Keywords :
"Neutrons","Radiation effects","Aluminum gallium nitride","Wide band gap semiconductors","HEMTs","MODFETs","Logic gates"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365622
