Title :
Investigation of SEGR Cross-Section in Power MOSFETs under Proton Irradiation
Author :
Evgenij V. Mitin;Valery G. Malinin
Abstract :
The cross-section of single-event gate rupture effect caused by 1 GeV protons is measured in several types of power MOSFETs. The influence of drain-source voltage is observed.
Keywords :
"MOSFET","Radiation effects","Protons","Logic gates","Voltage measurement","Atmospheric measurements","Particle measurements"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365624
