Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets (MCU) in the nanoscale (with feature sizes less than 100 nm) memories. Microdosimetric model of the MCU cross- section dependence on LET is proposed. It was shown that ideally a staircase-shaped cross-section vs LET curve spreads due to energy-loss straggling into a quasi-linear dependence with a slope depending on the memory cell area, the cell critical energy and the efficiency of charge collection.