New Insight into Heavy Ion Induced SEGR: Impact of Charge Yield

In this work an experimental evidence of a crucial role of the charge yield in the heavy ion induced single-event gate rupture (SEGR) process in SiO₂ is reported. The results of SEGR cross-sections and charge yield measurements are presented for different heavy ions with atomic number Z from 26 to 83. The dependence of breakdown voltage on deposited energy was derived taking statistical variations in the heavy ion deposited energy into account. It is shown that the SEGR breakdown voltage is a linear function of residual charge remained after recombination in ion track.