DocumentCode :
3718572
Title :
Physical Mechanisms of Radiation Response in Thick Isolation Oxides for Different Temperatures and Dose Rates
Author :
M. G. Drosdetsky;G. I. Zebrev;A. M. Galimov;R. G. Useinov
Author_Institution :
Dept. of Microand Nanoelectron., Nat. Res. Nucl. Univ. “
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed.
Keywords :
"Annealing","Degradation","Radiation effects","Electric fields","Mathematical model","Temperature dependence","Spontaneous emission"
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
Type :
conf
DOI :
10.1109/RADECS.2015.7365648
Filename :
7365648
Link To Document :
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