• DocumentCode
    3718572
  • Title

    Physical Mechanisms of Radiation Response in Thick Isolation Oxides for Different Temperatures and Dose Rates

  • Author

    M. G. Drosdetsky;G. I. Zebrev;A. M. Galimov;R. G. Useinov

  • Author_Institution
    Dept. of Microand Nanoelectron., Nat. Res. Nucl. Univ. “
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed.
  • Keywords
    "Annealing","Degradation","Radiation effects","Electric fields","Mathematical model","Temperature dependence","Spontaneous emission"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365648
  • Filename
    7365648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718572