Title :
Rad-Hard Versions of SPICE MOSFET Models for Effective Simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects
Author :
Konstantin O. Petrosyants;Igor A. Kharitonov;Lev M. Sambursky;Alexander S. Mokeev
Author_Institution :
Inst. for Design Problems in Microelectron., Moscow, Russia
Abstract :
SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applications for circuit simulation, is described for radiation hard Silicon-on-Insulator/Silicon-on-Sapphire technologies.
Keywords :
"Integrated circuit modeling","Semiconductor device modeling","MOSFET","Mathematical model","Radiation effects","Biological system modeling"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365651
