• DocumentCode
    3718575
  • Title

    Rad-Hard Versions of SPICE MOSFET Models for Effective Simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects

  • Author

    Konstantin O. Petrosyants;Igor A. Kharitonov;Lev M. Sambursky;Alexander S. Mokeev

  • Author_Institution
    Inst. for Design Problems in Microelectron., Moscow, Russia
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applications for circuit simulation, is described for radiation hard Silicon-on-Insulator/Silicon-on-Sapphire technologies.
  • Keywords
    "Integrated circuit modeling","Semiconductor device modeling","MOSFET","Mathematical model","Radiation effects","Biological system modeling"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365651
  • Filename
    7365651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718575