Title :
Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose
Author :
Lili Ding;Simone Gerardin;Marta Bagatin;Serena Mattiazzo;Dario Bisello;Alessandro Paccagnella
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Abstract :
We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.
Keywords :
"Radiation effects","MOSFET","Logic gates","CMOS integrated circuits","Threshold voltage"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365655
