• DocumentCode
    3718579
  • Title

    Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose

  • Author

    Lili Ding;Simone Gerardin;Marta Bagatin;Serena Mattiazzo;Dario Bisello;Alessandro Paccagnella

  • Author_Institution
    Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.
  • Keywords
    "Radiation effects","MOSFET","Logic gates","CMOS integrated circuits","Threshold voltage"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365655
  • Filename
    7365655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718579