Title :
Radiation-Hardened Gate Array with Embedded SRAM
Author :
N. Malashevich;M. Makarceva;R. Fedorov
Author_Institution :
Sci.-Manuf. Complex “
Abstract :
The problem of information storage reliability improvement in random access memory (RAM) devices oriented to application as part of gate arrays designed for space-related application is considered in this article.
Keywords :
"Logic gates","Random access memory","Arrays","Integrated circuits","Reliability","Protons","Resistance"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365656
