Semi-Empirical Method for Estimation of Single-Event Upset Cross-Section for SRAM DICE Cells

We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross-section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The method is based on experimental analysis of SEU maps in sub-100 nm 6T SRAM along with layout considerations and SPICE simulations. It could help to significantly improve SEE robustness of modern CMOS VLSI by design.